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hexfet power mosfet notes through are on page 9 features and benefits applications ? synchronous mosfet for high frequency buck converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 27 76 400 20 3021 120 50 -55 to + 150 3.6 0.029 59 v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 3.1 (@v gs = 4.5v) 4.6 q g typ 19 nc i d (@t c(bottom) = 25c) 50 a m features benefits low thermal resistance to pcb (< 1.7c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability

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d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.7 r jc (top) junction-to-case CCC 32 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.019 CCC v/c r ds(on) static drain-to-source on-resistance CCC 2.5 3.1 CCC 3.6 4.6 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -6.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 81 CCC CCC s q g total gate charge CCC 41 CCC nc q g total gate charge CCC 19 CCC q gs1 pre-vth gate-to-source charge CCC 5.8 CCC q gs2 post-vth gate-to-source charge CCC 2.3 CCC q gd gate-to-drain charge CCC 4.4 CCC q godr gate charge overdrive CCC 6.5 CCC q sw switch charge (q gs2 + q gd ) CCC 6.7 CCC q oss output charge CCC 18 CCC nc r g gate resistance CCC 1.7 CCC t d(on) turn-on delay time CCC 15 CCC t r rise time CCC 33 CCC t d(off) turn-off delay time CCC 18 CCC t f fall time CCC 12 CCC c iss input capacitance CCC 3180 CCC c oss output capacitance CCC 700 CCC c rss reverse transfer capacitance CCC 270 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 16 24 ns q rr reverse recovery charge CCC 35 53 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v CCC v gs = 20v v gs = -20v CCC CCC 400 CCC CCC 50 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a conditions max. 160 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 15v di/dt = 380a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. typ. CCC r g =1.8 v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = v gs , i d = 50 a a v gs = 4.5v, i d = 16a v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c m v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a downloaded from: http:///
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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 5.00v 4.50v 3.50v 3.00v 2.75v bottom 2.50v 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 5.00v 4.50v 3.50v 3.00v 2.75v bottom 2.50v 60 s pulse width tj = 150c 2.5v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a downloaded from: http:///

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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) 100 sec 1msec 10msec dc limited by source bonding technology downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.6a 8.6a bottom 20a downloaded from: http:///
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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pqfn 5x6 outline "e" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:///
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pqfn 5x6 outline "e" tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ bo w p 1 aoko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 aoko dimension (mm) code min max dimension (inch) min max 6.20 6.40 .244 .252 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 5.20 5.40 .205 .213 description w 1 qty 4000 reel diameter 13 inches downloaded from: http:///
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qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.78mh, r g = 50 , i as = 20a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. current is limited to 50a by source bonding technology. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel optio n (eol notice #259) ? updated tape and reel on page 8. ? updated data sheet based on corporate template. 5/13/2014 downloaded from: http:///

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